absolute maximum ratings t c electrical characteristics t =25 c unless otherwise specified c =25 c unless otherwise specified symbol parameter test conditions values unit v maximum d.c. reverse voltage r 2 0 0 v v maximum repetitive reverse voltage rrm 2 0 0 v i average forward current f(av) t c 3 0 =1 0 0 c , per diode a t c 6 0 = 1 0 0 c , per package a i rms forward current f(rms) t c 53 =1 0 0 c , per diode a i non - repetitive surge forward current fsm t j 3 00 = 45 c , t=10ms, 50hz, sine a p power dissipation d 156 w t junction temperature j - 40 to +150 c t storage temperature rang e stg - 40 to +1 50 c torque module - to - sink recommended m 3 1.1 n m r thermal resistance jc junction - to - case 0.8 c /w weight 6.0 g symbol parameter test conditions min. typ. max. unit i reverse leakage current rm v r -- =2 0 0 v -- 25 a v r =2 0 0 v, t j -- = 1 25 c -- 250 a v forward voltage f i f -- = 3 0a 0.86 1.1 v i f = 3 0a , t j -- = 125 c -- 0.95 v t reverse recovery time r r i f = 1 a , v r = 30 v, di f - - /dt= - 2 00a/s 2 2 -- ns t reverse recovery time r r v r =1 00 v, i f = 3 0 a di f /dt= - 2 00a/s, t j -- =25 c 26 -- ns i max. reverse recovery current rrm -- 2. 3 -- a t reverse recovery time r r v r =1 00 v, i f = 3 0 a di f /dt= - 2 00a/s, t j -- =125 c 4 0 -- ns i max. reverse recovery current rrm -- 4.1 -- a to-247ad/to-3p ? MUR6020PT pb free plating product MUR6020PT 60.0 ampere,200 volt common cathode fast recovery epitaxial diode pb internal configuration cathode(bottom side metal heatsink) cathode anode base backside ultrafast recovery time soft recovery characteristics low recovery loss low forward voltage high surge current capability low leakage current application general description freewheeling, snubber, clamp inversion welder pfc plating power supply ultrasonic cleaner and welder converter & chopper ups product feature MUR6020PT using the lastest fred fab process(planar passivation chip) with ultrafast and soft recovery characteristic. ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/3 rev.05 ? ? ? ? ? ? ? ? ? ? anode
i f (a) v f v fig1. forward voltage drop vs forward current t j = 1 25 c t j =25 c 6 0 50 4 0 30 2 0 10 0 0 0. 2 0.4 0.8 1.0 1.2 di f /dt a/ s fig 2 . reverse recovery time vs di f /dt 1 00 0 8 00 6 00 4 00 2 00 0 0 2 0 t rr ( ns ) 4 0 6 0 8 0 10 0 v r = 1 00 v t j =1 25 c i f = 6 0a i f = 1 5a i f = 3 0a i rrm (a) di f /dt a/ s fig 3 . reverse recovery current vs di f /dt 25 2 0 15 1 0 5 0 0 200 400 600 80 0 1000 di f /dt a/ s fig 4 . reverse recovery charge vs di f /dt 1 00 0 8 00 6 00 4 00 2 00 0 0 50 q rr ( n c ) 100 150 200 250 v r = 1 00 v t j =1 25 c i f = 6 0a i f = 1 5a i f = 3 0a v r = 1 00 v t j =1 25 c i f = 6 0a i f = 3 0a i f = 1 5a k f duty 0.5 0.2 0.1 0.05 single p ulse 0 0. 2 0. 4 1.2 0 .6 1 0 1 10 - 1 10 - 2 10 - 3 z thjc (k/w) 0.8 i rrm q rr t rr t j ( c ) fig 5 . dynamic parameters vs junction temperature 0 25 50 1 00 1 50 1 10 - 1 10 - 2 10 - 3 10 - 4 rectangular pulse duration (seconds) fig 6 . transient thermal impedance 75 125 0.6 1 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/3 rev.05 ? MUR6020PT
fig 7 . diode reverse recovery t est circuit and waveform i f di f /dt t rr i rrm q rr 0.25 i rrm 0. 9 i rrm ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 3/3 rev.05 . di m ens ions in millimeters fig 8 . package outline ? MUR6020PT
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